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| 2SA1576A PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-323 MAXIMUM RATINGS(Ta=25C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -60 -50 -6.0 -150 200 +150 -55 to +150 Unit V V V mA mW C C SOT-323 Outline Dimension A Unit:mm TOP VIEW D E G H B C K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 1/3 21-Jan-09 2SA1576A ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC = -50A, I E = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= -50A, IC = 0A Collector Cuto Current VCB = -60V, IE = 0A Emitter Cuto Current VEB = -6V, IC = 0A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -60 -50 -6.0 - Typ - Max -0.1 -0.1 Unit V V V A A ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -50mA, I B = -5mA DC Current Transfer Ration VCE = -6V, IC = -1mA VCE(sat) hFE 120 -0.5 560 V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-12V, I C = -2mA, f=30MHz Collector output capacitane VCB=-12V, I E = 0mA, f=1MHz fT Cob 140 4 5 MHz pF CLASSIFICATION hFE Rank Range Marking Q 120-270 FQ R 180-390 FR S 270-560 FS WEITRON http://www.weitron.com.tw 2/3 21-Jan-09 2SA1576A Electrical characteristic curves -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 Ta=100C 25C -40C VCE=-6V -10 -35.0 Ta=25C -31.5 -28.0 -24.5 -100 Ta=25C -500 -450 -400 -350 -300 -8 -80 -6 -21.0 -17.5 -60 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A -20 -50A IB=0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 -0.4 -0.8 -1.2 -1.6 IB=0 -2.0 0 -1 -2 -3 -4 -5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 Ta=25C VCE=-5V -3V -1V DC CURRENT GAIN : hFE 500 Ta=100C 25C -1 Ta=25C DC CURRENT GAIN : hFE -0.5 200 200 -40C 100 -0.2 IC/IB=50 -0.1 20 10 100 50 50 VCE=-6V -5 -10 -20 -50 -100 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 1000 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE=-12V 20 Cib 10 -0.5 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 Ta=100C 25C -40C 200 100 5 -0.1 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 50 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage WEITRON http://www.weitron.com.tw 3/3 21-Jan-09 |
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